Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs
نویسندگان
چکیده
منابع مشابه
Analysis of Halo Implanted MOSFETs
MOSFETs with heavily doped regions at one or both ends of the channel exhibit qualitative differences in electrical behavior compared to devices with laterally uniform channel doping. These differences include a distinct peakiness in the transconductance near threshold, asymmetries in capacitances, and a surprising decrease in the statistical variation of the peak gain factor as channel length ...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2015
ISSN: 2168-6734
DOI: 10.1109/jeds.2015.2424686